Title :
0.98 μm InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber
Author :
Ohkubo, Michio ; Namiki, Shu ; Ijichi, Tetsuro ; Iketani, Akira ; Kikuta, Toshio
Author_Institution :
Furukawa Electric Co. Ltd., Yokohama, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
A CW optical power of 75 mW coupled into a single-mode fiber (SMF) at a driving current of 200 mA was achieved by InGaAs-InGaAsP-InGaP graded-index separate-confinement-heterostructure strained-layer single-quantum-well (GRIN-SCH Sl-SQW) ridge waveguide lasers emitting at 0.98 μm. The GRIN-SCH profile was optimized to minimize the series resistance due to spikes at GaAs-InGaP heterointerfaces. Highly efficient coupling into a SMF with cutoff wavelength of 0.88 μm by precisely controlling the ridge mesa width (around 2 μm) and reducing the aspect ratio of the far-field pattern to 1.9. As a result, 0.98-μm InGaP cladding lasers show performance comparable to the conventional AlGaAs cladding lasers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; optical couplers; optical fibres; semiconductor lasers; 0.98 micron; 200 mA; 75 mW; CW optical power; GRIN-SCH Sl-SQW; GaAs-InGaP; InGaAs-InGaAsP-InGaP; aspect ratio; far-field pattern; graded-index separate-confinement-heterostructure; ridge mesa width; semiconductors; single-mode fiber; strained-layer single quantum-well lasers; Chemical lasers; Fiber lasers; Gallium arsenide; Laser beam cutting; Laser excitation; Optical coupling; Optical pumping; Power lasers; Pump lasers; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
