Title :
Fabrication of a m.o.s.f.e.t. with `spoxide¿ as the gate dielectric having low interface state density
Author :
Chakrabarti, Utpal Kumar
Author_Institution :
Indian Institute of Technology, Centre for Applied Research in Electronics, New Delhi, India
Abstract :
Spin-on oxide (Spoxide), which forms part of the class of deposited oxides, has been found to produce a good electrical interface with silicon after HCl annealing, and surface-state densities of the order of 4 × 1010 eV¿1 cm¿2 are easily achievable. An n-channel depletion-type m.o.s.f.e.t. has been fabricated with Spoxide as the gate dielectric.
Keywords :
insulated gate field effect transistors; MOSFET; gate dielectric; interface state density; n-channel depletion type device; spin on oxide; spoxide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780511
