DocumentCode :
948632
Title :
Modeling and design of proton-implanted ultralow-threshold vertical-cavity laser diodes
Author :
Michalzik, Rainer ; Ebeling, Karl Joachim
Author_Institution :
Ulm Univ., Germany
Volume :
29
Issue :
6
fYear :
1993
fDate :
6/1/1993 12:00:00 AM
Firstpage :
1963
Lastpage :
1974
Abstract :
Detailed theoretical models are presented and used for investigating the optical, electrical, and thermal characteristics of gain-guided vertical-cavity lasers. A two-dimensional description of current flow in the proton-implanted region is achieved. Heterojunctions are taken into account for the first time, and their influence on current spreading is demonstrated. Thorough finite-element calculations of the temperature profile in the whole device indicate the formation of a thermally induced waveguide. The temperature dependence of threshold current is evaluated, and it is shown that different mode positions greatly influence the output characteristics of the laser. The models are used to analyze the behavior of three-terminal vertical-cavity lasers. Good agreement is obtained between experimental and theoretical results. Using optimized design, record low threshold currents of 650 μA have been achieved
Keywords :
finite element analysis; laser beams; laser cavity resonators; laser theory; optical waveguides; semiconductor lasers; 650 muA; current flow; current spreading; electrical characteristics; finite-element calculations; gain-guided vertical-cavity lasers; heterojunctions; mode positions; optical characteristics; optimized design; output characteristics; proton implanted lasers; temperature dependence; temperature profile; thermal characteristics; thermally induced waveguide; three-terminal vertical-cavity lasers; threshold current; ultralow-threshold vertical-cavity laser diodes; Design optimization; Finite element methods; Heterojunctions; Laser modes; Laser theory; Optical waveguides; Temperature dependence; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.234459
Filename :
234459
Link To Document :
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