DocumentCode
948632
Title
Modeling and design of proton-implanted ultralow-threshold vertical-cavity laser diodes
Author
Michalzik, Rainer ; Ebeling, Karl Joachim
Author_Institution
Ulm Univ., Germany
Volume
29
Issue
6
fYear
1993
fDate
6/1/1993 12:00:00 AM
Firstpage
1963
Lastpage
1974
Abstract
Detailed theoretical models are presented and used for investigating the optical, electrical, and thermal characteristics of gain-guided vertical-cavity lasers. A two-dimensional description of current flow in the proton-implanted region is achieved. Heterojunctions are taken into account for the first time, and their influence on current spreading is demonstrated. Thorough finite-element calculations of the temperature profile in the whole device indicate the formation of a thermally induced waveguide. The temperature dependence of threshold current is evaluated, and it is shown that different mode positions greatly influence the output characteristics of the laser. The models are used to analyze the behavior of three-terminal vertical-cavity lasers. Good agreement is obtained between experimental and theoretical results. Using optimized design, record low threshold currents of 650 μA have been achieved
Keywords
finite element analysis; laser beams; laser cavity resonators; laser theory; optical waveguides; semiconductor lasers; 650 muA; current flow; current spreading; electrical characteristics; finite-element calculations; gain-guided vertical-cavity lasers; heterojunctions; mode positions; optical characteristics; optimized design; output characteristics; proton implanted lasers; temperature dependence; temperature profile; thermal characteristics; thermally induced waveguide; three-terminal vertical-cavity lasers; threshold current; ultralow-threshold vertical-cavity laser diodes; Design optimization; Finite element methods; Heterojunctions; Laser modes; Laser theory; Optical waveguides; Temperature dependence; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.234459
Filename
234459
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