• DocumentCode
    948672
  • Title

    Spatial distribution of defects in SiO2

  • Author

    Mughal, H.A. ; Eccleston, W. ; Stuart, R.A.

  • Author_Institution
    University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
  • Volume
    14
  • Issue
    24
  • fYear
    1978
  • Firstpage
    761
  • Lastpage
    762
  • Abstract
    Predictions of the yield of integrated circuits are at present based on the assumption that defects are distributed spatially over the surface of a silicon slice according to Bose-Einstein statistics. In this letter it is shown, by means of the liquid-crystal technique, that at least one type of defect which can occur in integrated circuits-the oxide defect-obeys Poisson statistics.
  • Keywords
    insulating thin films; monolithic integrated circuits; silicon compounds; SiO2; defects; integrated circuits;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780515
  • Filename
    4242807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=948672