Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 μm

Author

Yellen, S.L. ; Shepard, A.H. ; Dalby, R.J. ; Baumann, J.A. ; Serreze, H.B. ; Guido, T.S. ; Soltz, R. ; Bystrom, K.J. ; Harding, C.M. ; Waters, R.G.

Author_Institution

McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

2058

Lastpage

2067

Abstract

Results of reliability studies of GaInP (0.6-0.7 μm); AlGaAs, InAlGaAs, and InGaAsP (0.81 μm); GaAs (0.86 μm); and InGaAs (0.9-1.1 μm) quantum-well laser diodes are summarized. Conclusions drawn from over one million cumulative lifetest hours and substantial electron-beam-induced-current (EBIC) failure analysis are presented. Improvements in laser reliability with the addition of indium (in both sudden failures and gradual degradation) and with the elimination of aluminium (in gradual degradation) have been observed. These trends, combined with the observed inconsequential effect of strain, provide guidelines for the design of highly reliable lasers

Keywords

III-V semiconductors; gallium arsenide; laser transitions; reliability; semiconductor lasers; 0.6 to 1.1 micron; AlGaAs; GaAs; GaAs-based semiconductor diode lasers; GaInP; InAlGaAs; InGaAs; InGaAsP; cumulative lifetest hours; design; electron beam induced current failure analysis; gradual degradation; laser reliability; quantum-well laser diodes; strain; Aluminum; Capacitive sensors; Degradation; Failure analysis; Gallium arsenide; Indium gallium arsenide; Quantum well lasers; Semiconductor device reliability; Semiconductor diodes; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234469

Filename

234469