Lateral npn junction and semi-insulating GaAs current confinement structure for index-guided InGaAs/AlGaAs lasers by molecular beam epitaxy

Author

Takamori, Takeshi ; Watanabe, Kenji ; Kamijoh, Takeshi

Author_Institution

Oki Electric Ind. Co. Ltd., Tokyo, Japan

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

2074

Lastpage

2080

Abstract

A current confinement structure with a lateral npn junction and a semi-insulating (SI) GaAs is examined for an index-guided InGaAs/AlGaAs strained quantum-well laser. Amphoteric doping of Si in GaAs and AlGaAs is used to form a lateral npn structure grown over a channeled patterned low-temperature-grown SI GaAs layer. A threshold current of 7.4 mA and total external differential quantum efficiency of 59% under room-temperature continuous-wave (CW) operation are achieved with devices fabricated by a self-aligned process. A device with antireflection-high-reflection (AR-HR) coating had a light output over 300 mW

Keywords

III-V semiconductors; aluminium compounds; antireflection coatings; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; 59 percent; 7.4 mA; AlGaAs:Si; GaAs:Si; amphoteric doping; antireflection high reflection coatings; channeled patterned; continuous wave operation; current confinement structure; index guided InGaAs-AlGaAs strained quantum well laser; lateral npn junction; light output; molecular beam epitaxy; self-aligned process; semiinsulating GaAs layer; threshold current; total external differential quantum efficiency; Conductivity; Diode lasers; Doping; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical waveguides; Substrates; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234471

Filename

234471