Title :
InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD
Author :
Aoki, Masahiro ; Suzuki, Makoto ; Sano, Hirohisa ; Kawano, Toshihiro ; Ido, Tatemi ; Taniwatari, Tsuyoshi ; Uomi, Kazuhisa ; Takai, Atsushi
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
The fabrication and basic characteristics of a InGaAs/InGaAsP multi-quantum-well (MQW) electroabsorption modulator with a novel structure integrated with a distributed-feedback (DFB) laser are presented. A fundamental study was performed on the applicability of the InGaAs/InGaAsP MQW structure to an electroabsorption-type modulator. Efficient attenuation small hole pileup and small chirp characteristics of a discrete modulator based on this MQW structure were demonstrated experimentally. A study of the controllability of in-plane band-gap energy by the use of selective-area metal-organic chemical vapor deposition (MOCVD) was also demonstrated. The modulator was monolithically integrated with a MQW DFB laser of the same material. Using a low-capacitance semi-insulating buried heterostructure, over 14 GHz modulation under high-light-output operations up to +10 dBm was achieved. Modulation at 10 Gb/s with a modulation voltage swing of only 1 Vpp demonstrates the potential value of this system for 1.55-μm lightwave communications
Keywords :
III-V semiconductors; distributed feedback lasers; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical modulation; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAs-InGaAsP multiquantum well electroabsorption modulator; band-gap energy control selective area MOCVD; basic characteristics; chirp characteristics; controllability; distributed feedback laser; fabrication; high-light-output operations; in-plane band-gap energy; integrated structure; lightwave communications; modulation voltage swing; selective-area metal-organic chemical vapor deposition; semi-insulating buried heterostructure; small hole pileup; Chemical lasers; Chemical vapor deposition; Chirp modulation; Controllability; Indium gallium arsenide; MOCVD; Optical attenuators; Optical device fabrication; Photonic band gap; Quantum well devices;
Journal_Title :
Quantum Electronics, IEEE Journal of
