Optimization of short-flow MOS charging monitor for ion implantation

Author

Brozek, Tomasz ; Norton, Cory

Author_Institution

PDF Solutions, San Jose, CA, USA

Volume

15

Issue

4

fYear

2002

fDate

11/1/2002 12:00:00 AM

Firstpage

383

Lastpage

392

Abstract

Application of MOS capacitors for charging assessment is a widely accepted approach used by both process engineers and tool manufacturers. This paper presents results of optimizing short-flow on-wafer MOS capacitors with charge-collecting antennas to monitor charging caused by ion beams. The main factors considered during the optimization process include simplicity, testability, and sensitivity. Short-flow manufacturing of monitor wafers was developed to support the fast feedback "stick-and-test" approach.

Keywords

MOS capacitors; capacitive sensors; integrated circuit manufacture; integrated circuit testing; ion implantation; optimisation; process monitoring; production testing; sensitivity; surface charging; charge-collecting antennas; charging assessment; charging monitor; fast feedback stick-and-test approach; ion beams; ion implantation process; monitor wafers; on-wafer MOS capacitors; optimization process; optimized process flow; oxide penetration; process characterization; sensitivity; series resistance effect; short-flow MOS capacitors; short-flow manufacturing; test methodology; testability; tool qualification; wafer charging; CMOS technology; Crystalline materials; Electron beams; Ion beams; Ion implantation; MOS capacitors; Monitoring; Plasma measurements; Silicon; Testing;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2002.804873

Filename

1134150