Title :
Low-threshold GaInAsSb/GaAlAsSb double-heterostructure lasers grown by LPE
Author :
Morosini, M.B.Z. ; Herrera-Pérez, J.L. ; Loural, M.S.S. ; Zuben, A. A G Von ; Silveira, A. C F da ; Patel, N.B.
Author_Institution :
Univ. Estadual de Campinas, Brazil
fDate :
6/1/1993 12:00:00 AM
Abstract :
Ga0.86In0.14As0.19Sb0.87 /Ga0.79 Al0.27As0.02Sb0.98 2.2-μm lasers grown by liquid-phase epitaxy (LPE) with the lowest threshold current density to date are reported. Using transverse far-field patterns and theoretical calculations for the fundamental mode, the value of the active layer refractive index is estimated as 3.78. It is shown that the development of low-threshold-current stripe lasers is limited by an excessive current spread in the low-resistivity p-type active layer. This is partly solved by making the active region n-type. The minimum Ith obtained for n-type active layers was 290 mA compared to 800 mA for p-type active layers, the broad-area threshold current being the same (3 kA/cm2) in both cases
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium antimonide; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor lasers; 2.2 micron; Ga0.86In0.14As0.19Sb0.87 -Ga0.79 Al0.27As0.02Sb0.98 lasers; GaInAsSb-GaAlAsSb double heterostructure lasers; active layer refractive index; broad-area threshold current; excessive current spread; fundamental mode; liquid-phase epitaxy; low-resistivity p-type active layer; low-threshold-current stripe lasers; n-type active layers; theoretical calculations; threshold current density; transverse far-field patterns; Artificial intelligence; DH-HEMTs; Doped fiber amplifiers; Fiber lasers; Gas lasers; Laser modes; Laser radar; Refractive index; Stimulated emission; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
