Title :
Room-temperature operation of GaInAs/GaInAsP/InP SCH lasers with quantum-wire size active region
Author :
Miyake, Yasunari ; Hirayama, Hideki ; Kudo, Koji ; Tamura, Shigeo ; Arai, Shigehisa ; Asada, Masahiro ; Miyamoto, Yasuyuki ; Suematsu, Yasuharu
Author_Institution :
Tokyo Inst. of Technol., Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
Improvements in the fabrication of GaInAs(P)/InP devices consisting of an ultrafine structure by using two-step organometallic vapor phase epitaxy (OMVPE) growth, electron beam exposure direct writing, and wet chemical etching are reported. This improved process achieved, for the first time, a room-temperature continuous-wave (CW) operation of GaInAs/InP quantum-wire lasers consisting of 5-nm-thick and 10-30-nm-wide vertically stacked triple quantum-wire active region within the period of 70 nm. A large blue shift of ~40 nm was observed in both the lasing and the electroluminescence spectra of Ga0.3In0.7As/InP compressively strained multi-quantum-well (MQW) wire lasers consisting of a 3-nm-thick and 30-60-nm-wide five-wire active region, which suggests a reduced effective mass of holes along the in-plane direction
Keywords :
gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; semiconductor quantum wires; vapour phase epitaxial growth; 30 to 60 nm; Ga0.3In0.7As-InP compressively strained multiquantum well wire lasers; GaInAs-GaInAsP-InP separate confinement heterostructure lasers; blue shift; continuous wave operation; effective mass; electroluminescence spectra; electron beam exposure direct writing; fabrication; in-plane direction; two step organometallic vapor phase epitaxy growth; vertically stacked triple quantum-wire active region; wet chemical etching; Chemical lasers; Electroluminescence; Electron beams; Epitaxial growth; Indium phosphide; Optical device fabrication; Quantum well devices; Wet etching; Wire; Writing;
Journal_Title :
Quantum Electronics, IEEE Journal of
