• DocumentCode
    948864
  • Title

    Dielectric-constant step of InP/In1¿xGaxAsyP1¿y d.h. lasers

  • Author

    Henshall, G.D. ; Greene, P.D. ; Thompson, G.H.B. ; Selway, P.R.

  • Author_Institution
    Standard Telecommunication Laboratories Limited, Harlow, UK
  • Volume
    14
  • Issue
    24
  • fYear
    1978
  • Firstpage
    796
  • Lastpage
    797
  • Abstract
    Measurements are reported of the far-field beam angle perpendicular to the junction for InP/In1¿xGaxAsyP1¿y double-heterostructure lasers as a function of active-region thickness between 0.15 and 0.9 ¿m. The lasers operated with wavelengths close to 1.15 ¿m. Calculations show that good agreement between the theory and the experimental results is obtained using a dielectric-constant step ¿¿ between the InP and the In1¿xGaxAsyP1¿y of 0 75.
  • Keywords
    III-V semiconductors; indium compounds; semiconductor junction lasers; DH laser; InP-In1-xGaxAsyP1-y; dielectric constant step; double heterostructure lasers; semiconductor junction lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780537
  • Filename
    4242907
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=948864