Title :
Dielectric-constant step of InP/In1¿xGaxAsyP1¿y d.h. lasers
Author :
Henshall, G.D. ; Greene, P.D. ; Thompson, G.H.B. ; Selway, P.R.
Author_Institution :
Standard Telecommunication Laboratories Limited, Harlow, UK
Abstract :
Measurements are reported of the far-field beam angle perpendicular to the junction for InP/In1¿xGaxAsyP1¿y double-heterostructure lasers as a function of active-region thickness between 0.15 and 0.9 ¿m. The lasers operated with wavelengths close to 1.15 ¿m. Calculations show that good agreement between the theory and the experimental results is obtained using a dielectric-constant step ¿¿ between the InP and the In1¿xGaxAsyP1¿y of 0 75.
Keywords :
III-V semiconductors; indium compounds; semiconductor junction lasers; DH laser; InP-In1-xGaxAsyP1-y; dielectric constant step; double heterostructure lasers; semiconductor junction lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780537
