• DocumentCode
    948874
  • Title

    Resource conservation of buffered HF in semiconductor manufacturing

  • Author

    Inagaki, Yasuhito ; Shimizu, Mineo

  • Author_Institution
    Tech. Solutions Center, Sony Corp., Yokohama, Japan
  • Volume
    15
  • Issue
    4
  • fYear
    2002
  • fDate
    11/1/2002 12:00:00 AM
  • Firstpage
    434
  • Lastpage
    437
  • Abstract
    With buffered hydrogen fluoride (BHF) treatment, the etch rate of thermal oxide gradually increases over time. Thus, the old BHF must be frequently changed to new BHF in order to maintain the etch rate. As a result, considerable BHF and other chemicals to treat waste BHF are consumed and considerable waste such as sludge and wastewater is discharged. We have developed a new method to maintain the etch rate by supplying ammonia and water evaporated from BHF. The amount depends on the amount of NH4F/HF in BHF. Since the method can extend the usable lifetime of BHF, it will help to reduce BHF used and the chemicals required to treat waste BHF and decrease the discharge of wastewater and sludge.
  • Keywords
    ammonia; environmental factors; etching; hydrogen compounds; integrated circuit manufacture; H2O; HF; NH3; NH4F; ammonia supply; buffered HF treatment; etch rate; resource conservation; semiconductor manufacturing; sludge reduction; thermal oxide; wastewater reduction; water supply; Chemicals; Etching; Hafnium; Hydrogen; Large-scale systems; Semiconductor device manufacture; Semiconductor films; Silicon; Sludge treatment; Wastewater treatment;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2002.804905
  • Filename
    1134157