DocumentCode
948874
Title
Resource conservation of buffered HF in semiconductor manufacturing
Author
Inagaki, Yasuhito ; Shimizu, Mineo
Author_Institution
Tech. Solutions Center, Sony Corp., Yokohama, Japan
Volume
15
Issue
4
fYear
2002
fDate
11/1/2002 12:00:00 AM
Firstpage
434
Lastpage
437
Abstract
With buffered hydrogen fluoride (BHF) treatment, the etch rate of thermal oxide gradually increases over time. Thus, the old BHF must be frequently changed to new BHF in order to maintain the etch rate. As a result, considerable BHF and other chemicals to treat waste BHF are consumed and considerable waste such as sludge and wastewater is discharged. We have developed a new method to maintain the etch rate by supplying ammonia and water evaporated from BHF. The amount depends on the amount of NH4F/HF in BHF. Since the method can extend the usable lifetime of BHF, it will help to reduce BHF used and the chemicals required to treat waste BHF and decrease the discharge of wastewater and sludge.
Keywords
ammonia; environmental factors; etching; hydrogen compounds; integrated circuit manufacture; H2O; HF; NH3; NH4F; ammonia supply; buffered HF treatment; etch rate; resource conservation; semiconductor manufacturing; sludge reduction; thermal oxide; wastewater reduction; water supply; Chemicals; Etching; Hafnium; Hydrogen; Large-scale systems; Semiconductor device manufacture; Semiconductor films; Silicon; Sludge treatment; Wastewater treatment;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2002.804905
Filename
1134157
Link To Document