DocumentCode
948923
Title
Lithographyless ion implantation technology for agile fab
Author
Nishihashi, Tsutomu ; Kashimoto, Kazuhiro ; Fujiyama, Junki ; Sakurada, Yuzo ; Shibata, Takeshi ; Suguro, Kyoichi ; Sugihara, Kazuyoshi ; Okumura, Katsuya ; Gotou, Tadashi ; Saji, Nobuhito ; Tsunoda, Michio
Author_Institution
ULVAC Inc., Shizuoka, Japan
Volume
15
Issue
4
fYear
2002
fDate
11/1/2002 12:00:00 AM
Firstpage
464
Lastpage
469
Abstract
A new type of ion implanter developed for an agile fab can eliminate the processes concerned. with photoresist lithography from the ion implantation process. This new ion implantation technology can reduce the raw process time, footprint, and the cost of ownership to less than one-half that of conventional ion implantation technology. The authors are making further developments on this ion implanter and evaluating technical issues related to ion implantation. This technique is suitable for manufacturing submicron node IC devices. Based on the results of evaluating the prototype machine, we will produce the next β-machine.
Keywords
VLSI; ion implantation; masks; β-machine; agile fab; cost of ownership; footprint; ion implantation process; lithographyless ion implantation technology; raw process time; stencil; submicron node IC devices; Agile manufacturing; Biomembranes; Costs; Electrostatics; Implants; Ion beams; Ion implantation; Lithography; Resists; Semiconductor device manufacture;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2002.804923
Filename
1134162
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