• DocumentCode
    948965
  • Title

    Silicon synaptic adaptation mechanisms for homeostasis and contrast gain control

  • Author

    Liu, Shih-Chii ; Minch, Bradley A.

  • Author_Institution
    Inst. for Neuroinformatics, Zurich Univ., Switzerland
  • Volume
    13
  • Issue
    6
  • fYear
    2002
  • fDate
    11/1/2002 12:00:00 AM
  • Firstpage
    1497
  • Lastpage
    1503
  • Abstract
    We explore homeostasis in a silicon integrate-and-fire neuron. The neuron adapts its firing rate over time periods on the order of seconds or minutes so that it returns to its spontaneous firing rate after a sustained perturbation. Homeostasis is implemented via two schemes. One scheme looks at the presynaptic activity and adapts the synaptic weight depending on the presynaptic spiking rate. The second scheme adapts the synaptic "threshold" depending on the neuron\´s activity. The threshold is lowered if the neuron\´s activity decreases over a long time and is increased for prolonged increase in postsynaptic activity. The presynaptic adaptation mechanism models the contrast adaptation responses observed in simple cortical cells. To obtain the long adaptation timescales we require, we used floating-gates. Otherwise, the capacitors we would have to use would be of such a size that we could not integrate them and so we could not incorporate such long-time adaptation mechanisms into a very large-scale integration (VLSI) network of neurons. The circuits for the adaptation mechanisms have been implemented in a 2-μm double-poly CMOS process with a bipolar option. The results shown here are measured from a chip fabricated in this process.
  • Keywords
    CMOS integrated circuits; gain control; neural chips; neurophysiology; CMOS; VLSI; contrast gain control; cortical cell; firing rate; floating-gates; homeostasis; neural circuits; presynaptic spiking rate; silicon integrate-and-fire neuron; silicon synaptic adaptation mechanisms; sustained perturbation; synaptic weight; very large-scale integration; Adaptation model; CMOS process; Capacitors; Circuits; Gain control; Large scale integration; Neurons; Semiconductor device measurement; Silicon; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Neural Networks, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1045-9227
  • Type

    jour

  • DOI
    10.1109/TNN.2002.804224
  • Filename
    1058083