DocumentCode
949023
Title
GaInAsP twin-stripe lasers with asymmetrical waveguide channels
Author
Wolf, Th. ; Kappeler, F. ; Stegm¿¿ller, B. ; Amann, M.-C.
Author_Institution
Siemens AG, Research Laboratories, Munich, West Germany
Volume
135
Issue
1
fYear
1988
fDate
2/1/1988 12:00:00 AM
Firstpage
5
Abstract
Design and lasing characteristics of ¿¿=1.3 ¿¿m GaInAsP twin-stripe (TS) metal-clad ridge-waveguide lasers, with a varying degree of index guiding between the channels are reported. The TS devices operate stably in the TE polarised mode, even if under single-stripe injection TM polarisation is observed. Effective longitudinal mode selectivity has been obtained for the TS lasers with an effective index step in the range of 1¿¿10¿¿2 to 5¿¿10¿¿3 between the channels. This mode selectivity can be explained by assuming coupling of lateral modes of the twin waveguide structure via the common gain-medium.
Keywords
gallium arsenide; gallium compounds; indium compounds; laser transitions; optical waveguides; semiconductor junction lasers; 1.3 micron; GaInAsP; TE polarised mode; TM polarisation; asymmetrical waveguide channels; index guiding; longitudinal mode selectivity; metal-clad ridge-waveguide lasers; semiconductor; twin-stripe lasers;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
DOI
10.1049/ip-j.1988.0003
Filename
4648620
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