Integrated semiconductor ring lasers

Author

Jezierski, A.F. ; Laybourn, P.J.R.

Author_Institution

University of Glasgow, Department of Electronics and Electrical Engineering, Glasgow, UK

Volume

135

Issue

1

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

17

Lastpage

24

Abstract

Ring-waveguide and pill-box structures down to 12 ¿¿m in diameter, made in GaAs/GaAlAs heterostructure material, have been designed with output stripe waveguides coupled to the rings via Y-junctions. The waveguides were defined by reactive ion etching, although the inner boundaries of some of the ring waveguides relied on stress and carrier confinement. Lasing has been observed with pulsed drive current, and has been shown to correspond to resonances in the rings, although other resonances have been observed in some of the structures. This type of structure is suitable for use as a light source in monolithic integrated optics.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; optical waveguides; ring lasers; semiconductor junction lasers; 12 micron; GaAs-GaAlAs; Y-junctions; carrier confinement; integrated semiconductor ring lasers; light source; monolithic integrated optics; pill-box structures; pulsed drive current; reactive ion etching; ring-waveguide structures; semiconductor; stress; stripe waveguides;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

DOI

10.1049/ip-j.1988.0005

Filename

4648626