DocumentCode
949171
Title
Compensation degradation mechanism for high-efficiency GaAs IMPATT diodes
Author
Smith, J.G.
Author_Institution
Royal Signals & Radar Establishment, Baldock, UK
Volume
15
Issue
3
fYear
1979
Firstpage
74
Lastpage
75
Abstract
The reliability of Cr Schottky-barrier high-efficiency (hi-lo) GaAs IMPATTs has been investigated. Devices operated under d.c. conditions degraded due to compensation of the electron concentration in the avalanche region of the devices. This degradation was not observed in diodes oven-tested with no bias applied.
Keywords
IMPATT diodes; Schottky-barrier diodes; reliability; GaAs IMPATT diodes; Schottky barrier diodes; avalanche region; compensation degradation compensation; electron concentration; reliability;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790054
Filename
4242971
Link To Document