DocumentCode :
949176
Title :
Simulation of high-frequency integrated circuits incorporating full-wave analysis of microstrip discontinuities
Author :
Kipp, Robert ; Chan, Chi H. ; Yang, Andrew T. ; Yao, Jack T.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Volume :
41
Issue :
5
fYear :
1993
fDate :
5/1/1993 12:00:00 AM
Firstpage :
848
Lastpage :
854
Abstract :
Incorporates full-wave simulation of microstrip interconnects into circuit analysis and shows how predicted responses diverge from those based on models from a modern microwave-circuit CAD package. A method is presented for characterizing microstrip interconnects and discontinuities through the method of moments applied to a mixed-potential integral equation. The speed is greatly improved through the use of a recently published techniques for rapid evaluation of microstrip spatial Green´s functions. A microstrip circuit element is analyzed separately with this procedure, and scattering parameters are extracted from the computed current density. These parameters are passed to a circuit simulator, where small- and large-signal analyses reveal how differences in interconnect modeling affect predicted responses
Keywords :
Green´s function methods; S-parameters; circuit analysis computing; digital simulation; integral equations; microstrip lines; microwave integrated circuits; circuit analysis; circuit simulator; full-wave analysis; high-frequency integrated circuits; interconnect modeling; large-signal analyses; method of moments; microstrip discontinuities; microstrip interconnects; microstrip spatial Green´s functions; microwave-circuit CAD package; mixed-potential integral equation; scattering parameters; small-signal analysis; Analytical models; Circuit analysis; Circuit simulation; Integral equations; Integrated circuit interconnections; Integrated circuit modeling; Integrated circuit packaging; Microstrip; Moment methods; Predictive models;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.234521
Filename :
234521
Link To Document :
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