• DocumentCode
    949252
  • Title

    High-gain 9.25 GHz silicon bipolar transistor power amplifier

  • Author

    Wu, Y.S. ; Yuan, H.T. ; Wisseman, W.R.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, USA
  • Volume
    15
  • Issue
    3
  • fYear
    1979
  • Firstpage
    86
  • Lastpage
    87
  • Abstract
    A four-stage silicon bipolar transistor power amplifier operating at centre frequency 9.25 GHz is reported. The amplifier has output power exceeding 1.0 W over an instantaneous bandwidth of approximately 800 MHz. The power-added efficiency of the amplifier is measured to be better than 18%.
  • Keywords
    bipolar transistor circuits; microwave amplifiers; power amplifiers; solid-state microwave circuits; four stage amplifier; high gain 9.25 GHz bipolar transistor power amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790063
  • Filename
    4242980
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949252