• DocumentCode
    949265
  • Title

    Investigation of an optoelectronic nonlinear effect in a GaInAs photodiode, and its application in a coherent optical communication system

  • Author

    Humphreys, D.A. ; Lobbett, R.A.

  • Author_Institution
    National Physical Laboratory, Teddington, UK
  • Volume
    135
  • Issue
    1
  • fYear
    1988
  • fDate
    2/1/1988 12:00:00 AM
  • Firstpage
    45
  • Lastpage
    51
  • Abstract
    A nonlinear mixing effect has been predicted theoretically, and measured using a GaInAs PIN photodiode. The nonlinear effect has been simulated using a small signal finite difference model. The variation of the effect has been measured over the frequency range 1.2¿¿15 GHz for a number of bias voltages from 5 to 20 V, and the effect has been shown to be optoelectronic in origin. A high frequency heterodyne experiment has been performed with the optical and local oscillator signals in the range 10¿¿20 GHz. The difference beat frequency was observed at 500 MHz and 2 GHz. The measured conversion loss was between 27 and 40 dB for a 0 dBm local oscillator signal. The application of the optoelectronic mixing effect to optical fibre frequency domain multiplex systems for the dissemination of frequency standards has been considered.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; multiplexing; nonlinear optics; optical communication equipment; photodiodes; 1.2 to 20 GHz; 27 to 40 dB; 5 to 20 V; GaInAs photodiode; PIN photodiode; coherent optical communication system; conversion loss; frequency standards; nonlinear mixing effect; optical fibre frequency domain multiplex systems; optoelectronic mixing effect; optoelectronic nonlinear effect; semiconductor; small signal finite difference model;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • DOI
    10.1049/ip-j.1988.0011
  • Filename
    4648644