DocumentCode
949312
Title
Comparison of charge yield in MOS devices for different radiation sources
Author
Paillet, P. ; Schwank, J.R. ; Shaneyfelt, M.R. ; Ferlet-Cavrois, V. ; Jones, R.L. ; Flarrient, O. ; Blackmore, E.W.
Author_Institution
CEA/DIF, France
Volume
49
Issue
6
fYear
2002
fDate
12/1/2002 12:00:00 AM
Firstpage
2656
Lastpage
2661
Abstract
NMOS transistors were irradiated using X-ray, Co-60 gamma, electron, and proton radiation sources. The charge yield was estimated for protons of different energies and electrons and compared to values obtained for X-ray and Co-60 irradiations.
Keywords
MOSFET; X-ray effects; electric charge; electron beam effects; gamma-ray effects; proton effects; space vehicle electronics; Co-60 gamma radiation source; MOS transistors; NMOS transistors; X-ray radiation source; charge yield comparison; device qualification; electron radiation source; ionizing radiation; proton radiation source; radiation-induced charge buildup; space environment; Degradation; Electrons; Laboratories; MOS devices; MOSFETs; Protons; Qualifications; Radiative recombination; Spontaneous emission; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.805438
Filename
1134200
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