Title :
Strain-induced optical waveguiding in GaAs epitaxial layers at 1.15 ¿m
Author :
Westbrook, L.D. ; Robson, P.N. ; Majerfeld, A.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Transverse optical waveguide modes have been observed in GaAs Schottky-barrier electro-optic waveguide modulators with no electrical bias. This is attributed to the spatial variation of the dielectric constant generated by stresses originating in the metal Schottky-barrier stripe.
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; integrated optics; optical waveguides; GaAs Schottky barrier electro optical modulator; GaAs epitaxial layers; strain induced optical waveguiding; transverse modes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790072
