DocumentCode
949365
Title
Consistency of bulk damage factor and NIEL for electrons, protons, and heavy ions in Si CCDs
Author
Kuboyama, Satoshi ; Shindou, Hiroyuki ; Hirao, Toshio ; Matsuda, Sumio
Author_Institution
Nat. Space Dev. Agency of Japan, Ibaraki, Japan
Volume
49
Issue
6
fYear
2002
fDate
12/1/2002 12:00:00 AM
Firstpage
2684
Lastpage
2689
Abstract
It has been demonstrated that there are substantial differences between the form of defects introduced by electrons and those introduced by protons and heavy ions in Si charge coupled devices (CCDs). The consistency of the relationship between the displacement damage factor and nonionizing energy loss (NIEL) for electrons, protons, and heavy ions was clearly explained by the differences.
Keywords
charge-coupled devices; electron beam effects; elemental semiconductors; ion beam effects; proton effects; silicon; NIEL; Si; Si CCDs; Si charge coupled devices; bulk damage factor; defects; displacement damage; electrons; heavy ions; isolated point defects; nonionizing energy loss; protons; Charge coupled devices; Charge-coupled image sensors; Dark current; Degradation; Electrons; Energy loss; Epitaxial layers; Histograms; Manufacturing; Protons;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.805360
Filename
1134204
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