• DocumentCode
    949370
  • Title

    Design of narrow-linewidth phase-shifted distributed feedback lasers

  • Author

    Correc, P.

  • Author_Institution
    Centre National d´¿¿tudes des T¿¿l¿¿communications, Laboratoire de Bagneux, Division OMC, Bagneux, France
  • Volume
    135
  • Issue
    1
  • fYear
    1988
  • fDate
    2/1/1988 12:00:00 AM
  • Firstpage
    64
  • Lastpage
    67
  • Abstract
    By taking into account the practical constraints put on the bias current of a stripe geometry laser, we have calculated the minimum linewidth of a InGaAsP/InP phase-shifted distributed feedback laser, corresponding to the maximum available output power. We have obtained plots useful for the design of optimised structures showing that high coupling coefficients are not always desirable.
  • Keywords
    distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; spectral line breadth; InGaAsP-InP; bias current; narrow-linewidth phase-shifted distributed feedback lasers; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • DOI
    10.1049/ip-j.1988.0014
  • Filename
    4648653