DocumentCode :
949433
Title :
Waveguiding analysis of mushroom stripe laser diodes
Author :
Amann, Markus-Christian
Author_Institution :
Siemens AG, Research Laboratories, M¿¿nchen, West Germany
Volume :
135
Issue :
1
fYear :
1988
fDate :
2/1/1988 12:00:00 AM
Firstpage :
68
Lastpage :
73
Abstract :
The waveguide modes of ¿¿=1.3 ¿¿m InGaAsP-InP mushroom stripe laser diodes are analysed rigorously by means of the mode matching technique. The propagation constant and confinement factor of the fundamental TE- and TM-modes are calculated for wide ranges of the relevant laser parameters. Thereby, the cutoff condition for both modes is studied, revealing that for very narrow stripe devices (W>1 ¿¿m) first the TE-mode becomes cutoff due to radiation losses into the transverse direction. The cutoff-condition for higher order lateral modes is discussed, showing that the maximum stripe width for single lateral mode guiding is higher than for comparable buried heterostructure lasers. Finally, approximate results, as obtained by using the effective refractive index approximation, are compared with the rigorous solutions, showing a satisfactory agreement only for rather large stripe widths far above cutoff.
Keywords :
gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; optical waveguide theory; semiconductor junction lasers; 1.3 micron; InGaAsP-InP mushroom stripe laser diodes; TE-mode; TM-modes; confinement factor; cutoff-condition; effective refractive index approximation; fundamental modes; higher order lateral modes; mode matching technique; propagation constant; semiconductor; waveguide modes;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
DOI :
10.1049/ip-j.1988.0016
Filename :
4648659
Link To Document :
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