• DocumentCode
    949433
  • Title

    Waveguiding analysis of mushroom stripe laser diodes

  • Author

    Amann, Markus-Christian

  • Author_Institution
    Siemens AG, Research Laboratories, M¿¿nchen, West Germany
  • Volume
    135
  • Issue
    1
  • fYear
    1988
  • fDate
    2/1/1988 12:00:00 AM
  • Firstpage
    68
  • Lastpage
    73
  • Abstract
    The waveguide modes of ¿¿=1.3 ¿¿m InGaAsP-InP mushroom stripe laser diodes are analysed rigorously by means of the mode matching technique. The propagation constant and confinement factor of the fundamental TE- and TM-modes are calculated for wide ranges of the relevant laser parameters. Thereby, the cutoff condition for both modes is studied, revealing that for very narrow stripe devices (W>1 ¿¿m) first the TE-mode becomes cutoff due to radiation losses into the transverse direction. The cutoff-condition for higher order lateral modes is discussed, showing that the maximum stripe width for single lateral mode guiding is higher than for comparable buried heterostructure lasers. Finally, approximate results, as obtained by using the effective refractive index approximation, are compared with the rigorous solutions, showing a satisfactory agreement only for rather large stripe widths far above cutoff.
  • Keywords
    gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; optical waveguide theory; semiconductor junction lasers; 1.3 micron; InGaAsP-InP mushroom stripe laser diodes; TE-mode; TM-modes; confinement factor; cutoff-condition; effective refractive index approximation; fundamental modes; higher order lateral modes; mode matching technique; propagation constant; semiconductor; waveguide modes;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • DOI
    10.1049/ip-j.1988.0016
  • Filename
    4648659