Title :
Radiation effects in low dielectric constant methyl-silsesquioxane films
Author :
Petkov, Mihail P. ; Lynn, Kelvin G. ; Rodbell, Kenneth P. ; Volksen, Willi ; Miller, Robert D.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
The use of state-of-the-art microelectronic devices in space radiation environments faces new challenges with the adoption of low dielectric constant (low-k) materials as interlevel dielectrics. This is demonstrated in a preliminary study of methyl-silsesquioxane low-k films. We report radiation damage, induced by a 2 keV low-current-density (∼2×106 s-1 cm-2) positron beam, and observed by positron annihilation spectroscopy.
Keywords :
dielectric thin films; integrated circuit metallisation; permittivity; positron annihilation; radiation effects; space vehicle electronics; 2 keV; dielectric constant; interlevel dielectrics; low-k films; methyl-silsesquioxane films; positron annihilation spectroscopy; positron beam; radiation damage; radiation effects; space radiation environments; Dielectric constant; Dielectric materials; Electronics industry; Electrons; Ionizing radiation; Polymers; Positrons; Radiation effects; Space technology; Spectroscopy;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805353
