• DocumentCode
    949445
  • Title

    Radiation-induced charge trapping in low-k silsesquioxane-based intermetal dielectric films

  • Author

    Devine, R.A.B. ; Tringe, J.W. ; Chavez, J.R.

  • Author_Institution
    Center for High Technol. Mater., Albuquerque, NM, USA
  • Volume
    49
  • Issue
    6
  • fYear
    2002
  • fDate
    12/1/2002 12:00:00 AM
  • Firstpage
    2729
  • Lastpage
    2732
  • Abstract
    Radiation-induced charge trapping has been studied in cured hydrogen silsesquioxane low dielectric constant films subjected to electric fields during the radiation process. Evidence is found for electric field-dependent negative charge trapping with a dose0.47 variation. The possible origin of the negative charge trapping is discussed.
  • Keywords
    dielectric thin films; electron traps; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; permittivity; radiation effects; dielectric constant; electric field-dependent negative charge trapping; intermetal dielectric films; low-k silsesquioxane-based films; radiation process; radiation-induced charge trapping; Curing; Dielectric constant; Dielectric films; Dielectric materials; Dielectric thin films; Integrated circuit interconnections; Laboratories; Planarization; Space vehicles; Spinning;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.805352
  • Filename
    1134212
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949445