• DocumentCode
    949519
  • Title

    Narrow-beam divergence of the emission from low-threshold GaInAsP/InP double-heterostructure lasers

  • Author

    Itaya, Yoshio ; Katayama, Shinya ; Suematsu, Yasuharu

  • Author_Institution
    Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
  • Volume
    15
  • Issue
    4
  • fYear
    1979
  • Firstpage
    123
  • Lastpage
    124
  • Abstract
    The angles of beam divergence perpendicular to the junction plane have been studied for low-threshold GaInAsP/InP double-heterostructure lasers with a thin active layer emitting at 1.31 ¿m. The narrowest beam divergence obtained was 23° for a laser diode with an active-layer thickness of 0.05 ¿m. At an active-layer thickness of 0.13 ¿m, the beam divergence was 40° with a threshold current density of 770 A/cm2.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; semiconductor junction lasers; 1.31 micron emission; 23 degree divergence; 770 A/cm2 threshold current density; GaInAsP/InP DH lasers; low threshold DH lasers; narrow beam emission divergence; thin active layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790090
  • Filename
    4243008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949519