DocumentCode :
949608
Title :
Heavy ion-induced charge collection mechanisms in CMOS active pixel sensor
Author :
Belredon, Xavier ; David, Jean-Pierre ; Lewis, Dean ; Beauchene, Thomas ; Pouget, Vincent ; Barde, Sébastien ; Magnan, Pierre
Author_Institution :
Centre de Toulouse, ONERA, Toulouse, France
Volume :
49
Issue :
6
fYear :
2002
fDate :
12/1/2002 12:00:00 AM
Firstpage :
2836
Lastpage :
2843
Abstract :
The CMOS active pixel sensors (APSs) can easily be designed for specific applications. Charge collection measurements have been achieved under heavy ion, alpha, and laser exposures on APS test die. The obtained results allow us to determinate the parameters to modify in order to design detectors dedicated to the detection of the space environment ionizing particles. Modeling of alpha exposure on APS complete this work. All these results demonstrate the important role of heavy ion-induced charge diffusion in APSs space applications.
Keywords :
CMOS image sensors; ion beam effects; CMOS APS; CMOS active pixel sensors; CMOS image sensors; heavy ion-induced charge collection mechanisms; heavy ion-induced charge diffusion; space environment ionizing particles; CMOS image sensors; Charge measurement; Current measurement; Design optimization; Infrared detectors; Photodiodes; Pulse measurements; Sensor arrays; Space charge; Spectroscopy;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2002.806301
Filename :
1134229
Link To Document :
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