• DocumentCode
    949624
  • Title

    Vapour-grown 1.3 ¿m InGaAsP/InP avalanche photodiodes

  • Author

    Olsen, G.H. ; Kressel, H.

  • Author_Institution
    RCA Laboratories, Princeton, USA
  • Volume
    15
  • Issue
    5
  • fYear
    1979
  • Firstpage
    141
  • Lastpage
    142
  • Abstract
    A novel planar InGaAsP/InP avalanche photodiode structure prepared by vapour-phase epitaxy is described. Avalanche gain up to 20 at 1.3 ¿m and at reverse breakdown of 65 V has been measured.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; infrared detectors; vapour phase epitaxial growth; 1.3 micron illumination; 20 avalanche gain; 65 V reverse breakdown; InGaAsP/InP avalanche photodiodes; VPE; planar structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790100
  • Filename
    4243019
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949624