Title :
Radiation hardness perspectives for the design of analog detector readout circuits in the 0.18-μm CMOS generation
Author :
Manghisoni, Massimo ; Ratti, Lodovico ; Re, Valerio ; Speziali, Valeria
Author_Institution :
Dipt. di Ingegneria, Universita di Bergamo, Dalmine, Italy
fDate :
12/1/2002 12:00:00 AM
Abstract :
This paper presents a study of the ionizing radiation tolerance of analog parameters of 0.18-μm CMOS transistors, in view of the application to the design of front-end integrated circuits for detectors in high-energy physics experiments. Static, signal, and noise performances of devices with various gate dimensions were monitored before and after irradiation up to a 300-kGy(Si) total dose of 60Co γ-rays. Different device biasing conditions under irradiation were used, and the relevant results are discussed. A comparison with previous CMOS generations is carried out to evaluate the impact of device scaling on the radiation sensitivity.
Keywords :
1/f noise; CMOS analogue integrated circuits; MOSFET; gamma-ray effects; integrated circuit design; nuclear electronics; radiation hardening (electronics); readout electronics; semiconductor device noise; white noise; 0.18 micron; 0.18-μm CMOS generation; 1/f noise; 300 kGy; CMOS analog detector readout circuit design; MOSFET noise components; analog parameters; device biasing conditions; front-end integrated circuits; gamma-ray irradiation; gate dimensions; high-energy physics experiments; ionizing radiation tolerance; noise performance; radiation hardness perspectives; radiation sensitivity; signal performance; static performance; white noise; Application specific integrated circuits; CMOS analog integrated circuits; CMOS integrated circuits; CMOS process; CMOS technology; Ionizing radiation; MOSFETs; Physics; Radiation detector circuits; Radiation detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805413
