• DocumentCode
    949705
  • Title

    Higher output power from BARITT diodes using ion implantation

  • Author

    Armstrong, B. Mervyn ; Moore, R.A. ; Wakefield, J.

  • Author_Institution
    Queen´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
  • Volume
    15
  • Issue
    5
  • fYear
    1979
  • Firstpage
    153
  • Lastpage
    155
  • Abstract
    Phosphorus-ion implantation has been used in simple m-n-p+ Baritt diodes to controllably modify electric-field profiles and give increased output power.
  • Keywords
    BARITT diodes; ion implantation; phosphorus; P ion implantation; electric field profile control; increased output power; metal-n-p+ devices; simple m-n-p+ Baritt diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790109
  • Filename
    4243028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949705