Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold current

Author

Thrush, E.J. ; Selway, P.R. ; Henshall, G.D.

Author_Institution

Standard Telecommunication Laboratories Limited, Harlow, UK

Volume

15

Issue

5

fYear

1979

Firstpage

156

Lastpage

158

Abstract

Double heterostructure laser junctions have been prepared by the metalorganic vapour deposition process and evaluated for threshold current and for nonradiative recombination characteristics. Threshold currents around 850 A cmÂ¿2 were obtained, and measurements of carrier lifetime and spontaneous emission efficiency correlate well with a nonradiative lifetime of 20 ns. This value is similar to those obtained in junctions grown by liquid-phase epitaxy and puts an upper limit on interface recombination velocity of 500 cm sÂ¿1.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaAs-GaAlAs double heterojunction lasers; carrier lifetime; interfacial recombination velocity below 500 cm/s; low interfacial recombination; low threshold current; metalorganic CVD growth; metalorganic vapour deposition; nonradiative lifetime 20 ns; nonradiative recombination characteristics; spontaneous emission efficiency; threshold current 850 A/cm2;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19790111

Filename

4243030