Title :
Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold current
Author :
Thrush, E.J. ; Selway, P.R. ; Henshall, G.D.
Author_Institution :
Standard Telecommunication Laboratories Limited, Harlow, UK
Abstract :
Double heterostructure laser junctions have been prepared by the metalorganic vapour deposition process and evaluated for threshold current and for nonradiative recombination characteristics. Threshold currents around 850 A cm¿2 were obtained, and measurements of carrier lifetime and spontaneous emission efficiency correlate well with a nonradiative lifetime of 20 ns. This value is similar to those obtained in junctions grown by liquid-phase epitaxy and puts an upper limit on interface recombination velocity of 500 cm s¿1.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaAs-GaAlAs double heterojunction lasers; carrier lifetime; interfacial recombination velocity below 500 cm/s; low interfacial recombination; low threshold current; metalorganic CVD growth; metalorganic vapour deposition; nonradiative lifetime 20 ns; nonradiative recombination characteristics; spontaneous emission efficiency; threshold current 850 A/cm2;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790111
