Title :
Probing the charge-collection sensitivity profile using a picosecond pulsed laser at a range of wavelengths
Author :
Chugg, A.M. ; Jones, R. ; Moutrie, M. ; Dyer, C.S. ; Sanderson, C. ; Wraight, A.
Author_Institution :
Radiat. Effects Group, MBDA U.K. Ltd., Bristol, UK
fDate :
12/1/2002 12:00:00 AM
Abstract :
A new empirical methodology is defined and demonstrated in which the charge collection sensitivity profile of single-event effect (SEE)-susceptible nodes in microcircuits is calculated on the basis of laser pulse measurements of the upset threshold at a range of wavelengths.
Keywords :
integrated circuit measurement; laser beam effects; measurement by laser beam; charge collection sensitivity profile; microcircuit; picosecond pulsed laser measurement; single event effect; upset threshold; Energy measurement; Helium; Laser theory; Microelectronics; Optical pulses; Pulse measurements; Pulsed laser deposition; Silicon; Testing; Wavelength measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805553
