Title :
Gamma enhancement of proton-induced SEE cross section in a CMOS SRAM
Author :
Erhardt, Lorne S. ; Haslip, Dean S. ; Cousins, Tom ; Buhr, Robert ; Estan, Diego
Author_Institution :
Defence R&D Canada, Ottawa, Ont., Canada
fDate :
12/1/2002 12:00:00 AM
Abstract :
CMOS SRAM parts (NEC 431000ACZ-70L) were tested for possible combined effects of gamma and proton irradiation. The parts were irradiated with a 60Co source to a variety of doses and at different dose rates. These parts were subsequently subjected to identical tests for proton-induced single-event effects (SEES). The cross section for proton-induced SEES increased with the prior 60Co dose and also showed an enhancement at lower dose rates.
Keywords :
CMOS memory circuits; SRAM chips; gamma-ray effects; proton effects; CMOS SRAM; NEC 431000ACZ-70L; combined effect; gamma irradiation; proton irradiation; single-event effect cross-section; stress synergy; Gamma rays; National electric code; Protons; Random access memory; Research and development; SRAM chips; Single event upset; Stress; Testing; Writing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805368
