Model for high-temperature radiation effects in n-p-n bipolar-junction transistors

Author

Boch, J. ; Saigné, F. ; Mannoni, V. ; Giustino, F. ; Schrimpf, R.D. ; Dusseau, L. ; Galloway, K.F. ; Fesquet, J. ; Gasiot, J. ; Ecoffet, R.

Author_Institution

LAM, Univ. de Reims, France

Volume

49

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

2990

Lastpage

2997

Abstract

A model is proposed to evaluate both the optimum temperature (leading to the maximum degradation of the device) and the degradation induced by high-temperature irradiation at a given dose rate on n-p-n bipolar-junction transistors. Using a genetic algorithm, the model parameters are extracted by fitting experimental curves. The model and experimental results, presented for two different devices, are in good agreement. The fitting procedure is discussed.

Keywords

X-ray effects; bipolar transistors; gamma-ray effects; genetic algorithms; high-temperature electronics; interface states; semiconductor device models; dose rate; enhanced low-dose rate sensitivity; fitting procedure; genetic algorithm; high-temperature radiation effects; interface traps; maximum degradation; model; model parameter extraction; n-p-n bipolar-junction transistors; optimum irradiation temperature; oxide trapped charges; Degradation; Electron traps; Genetic algorithms; Interface states; Performance evaluation; Protons; Radiation effects; Space charge; Temperature dependence; Temperature sensors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.805367

Filename

1134251