Title :
Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors
Author :
Pershenkov, V.S. ; Bashin, A.Y. ; Zebrev, G.I. ; Avdeev, S.V. ; Belyakov, V.V. ; Ulimov, V.N. ; Emelianov, V.V.
Author_Institution :
Moscow Eng. Phys. Inst., Russia
fDate :
12/1/2002 12:00:00 AM
Abstract :
Enhancement and suppression of radiation-induced current-gain degradation in bipolar transistors has been observed after pre-irradiation infrared (IR) illumination under reverse and forward emitter-base bias, respectively. The effect of the IR illumination decreases during isochronal anneal and almost completely disappears at 100°C. A qualitative physical model has been proposed to explain the experimental results. The effect can be caused by an IR-light-induced transition between the neutral and dipole configurations of the precursor defects without changing the net electric charge. Possible applications of the effects are discussed.
Keywords :
X-ray effects; annealing; bipolar transistors; defect states; radiation hardening (electronics); semiconductor device models; 0.93 to 0.96 micron; 40 to 150 C; IR illumination; IR-light-induced transition; X-ray irradiation response; bipolar transistors; dipole configurations; forward emitter-base bias; isochronal anneal; n-p-n BiCMOS transistors; net electric charge; neutral configurations; p-n-p BiCMOS transistors; pre-irradiation infrared illumination; precursor defects; qualitative physical model; radiation-induced current-gain degradation; reverse emitter-base bias; Annealing; Bipolar transistors; Degradation; Hydrogen; Light emitting diodes; Lighting; Microelectronics; Packaging; Temperature; Thermal stresses;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805417
