DocumentCode
949851
Title
Subbandgap laser-induced single event effects: carrier generation via two-photon absorption
Author
McMorrow, Dale ; Lotshaw, William T. ; Melinger, Joseph S. ; Buchner, Stephen ; Pease, Ronald L.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
49
Issue
6
fYear
2002
fDate
12/1/2002 12:00:00 AM
Firstpage
3002
Lastpage
3008
Abstract
Carrier generation based on subbandgap two-photon absorption is demonstrated and shown to be a viable alternative to the conventional single-photon excitation approach in laser-induced single event effects. The two-photon approach exhibits characteristics distinct from those of single-photon excitation, and may be advantageous for a range of single-event effect investigations. The charge track produced by two-photon absorption more closely resembles that of heavy-ion irradiation and, because the photon energy is subbandgap, backside injection through bulk silicon wafers is straightforward and three-dimensional mapping is possible.
Keywords
analogue integrated circuits; comparators (circuits); laser beam effects; operational amplifiers; two-photon processes; ICs; backside injection; bulk silicon wafers; carrier generation; charge track; error injection; microelectronic circuitry; operational amplifier; single-event transients; subbandgap laser-induced single event effects; three-dimensional mapping; two-photon absorption; voltage comparator; Absorption; Laser excitation; Optical materials; Optical pulse generation; Optical pulses; Pulse circuits; Semiconductor lasers; Semiconductor materials; Silicon; Ultrafast optics;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.805337
Filename
1134253
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