• DocumentCode
    949851
  • Title

    Subbandgap laser-induced single event effects: carrier generation via two-photon absorption

  • Author

    McMorrow, Dale ; Lotshaw, William T. ; Melinger, Joseph S. ; Buchner, Stephen ; Pease, Ronald L.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    49
  • Issue
    6
  • fYear
    2002
  • fDate
    12/1/2002 12:00:00 AM
  • Firstpage
    3002
  • Lastpage
    3008
  • Abstract
    Carrier generation based on subbandgap two-photon absorption is demonstrated and shown to be a viable alternative to the conventional single-photon excitation approach in laser-induced single event effects. The two-photon approach exhibits characteristics distinct from those of single-photon excitation, and may be advantageous for a range of single-event effect investigations. The charge track produced by two-photon absorption more closely resembles that of heavy-ion irradiation and, because the photon energy is subbandgap, backside injection through bulk silicon wafers is straightforward and three-dimensional mapping is possible.
  • Keywords
    analogue integrated circuits; comparators (circuits); laser beam effects; operational amplifiers; two-photon processes; ICs; backside injection; bulk silicon wafers; carrier generation; charge track; error injection; microelectronic circuitry; operational amplifier; single-event transients; subbandgap laser-induced single event effects; three-dimensional mapping; two-photon absorption; voltage comparator; Absorption; Laser excitation; Optical materials; Optical pulse generation; Optical pulses; Pulse circuits; Semiconductor lasers; Semiconductor materials; Silicon; Ultrafast optics;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.805337
  • Filename
    1134253