Ion-track structure and its effects in small size volumes of silicon

Author

Akkerman, A. ; Barak, J.

Author_Institution

Soreq Nucl. Res. Center, Yavne´´el, Israel

Volume

49

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

3022

Lastpage

3031

Abstract

A model for ion-energy deposition in silicon, based on experimental data of the optical energy loss function, is presented. The model yields the characteristics of ion- and electron-interactions in silicon. Monte Carlo transport calculations based on this model give the energy distribution and its moments including a full and consistent description of the spatial ion track structure. The model was used for estimating the influence of the track structure on energy deposition in submicron devices and on the shape of the single event upsets (SEUs) cross-section curves.

Keywords

Monte Carlo methods; elemental semiconductors; energy loss of particles; ion beam effects; particle tracks; silicon; Monte Carlo model; Si; electron interaction; energy distribution; ion energy deposition; ion interaction; ion track structure; optical energy loss function; sensitive volume; silicon crystal; single event upset cross-section; submicron device; Dielectrics; Energy loss; Geophysical measurement techniques; Ground penetrating radar; Optical scattering; Particle beam optics; Shape; Silicon; Single event transient; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.805366

Filename

1134256