• DocumentCode
    949917
  • Title

    Laser annealing of m.o.s.-transistor channel implantations

  • Author

    Zimmer, G.

  • Author_Institution
    Universitÿt Dortmund, Lehrstuhl Bauelemente der Elektrotechnik, Dortmund, West Germany
  • Volume
    15
  • Issue
    6
  • fYear
    1979
  • Firstpage
    184
  • Lastpage
    186
  • Abstract
    Laser annealing of the implanted gate region of n-channel m.o.s. transistors is described. The threshold shift against dose is measured for laser-annealed and thermally annealed samples. Comparison with theoretical threshold shift shows that laser annealing yields full electrical activation without diffusive redistribution, in contrast to thermal annealing at 960°C.
  • Keywords
    annealing; insulated gate field effect transistors; laser beam applications; MOST transistors; channel implantations; diffusive redistribution; electrical activation; laser annealing; threshold shift;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790129
  • Filename
    4243055
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949917