Title :
Laser annealing of m.o.s.-transistor channel implantations
Author_Institution :
Universitÿt Dortmund, Lehrstuhl Bauelemente der Elektrotechnik, Dortmund, West Germany
Abstract :
Laser annealing of the implanted gate region of n-channel m.o.s. transistors is described. The threshold shift against dose is measured for laser-annealed and thermally annealed samples. Comparison with theoretical threshold shift shows that laser annealing yields full electrical activation without diffusive redistribution, in contrast to thermal annealing at 960°C.
Keywords :
annealing; insulated gate field effect transistors; laser beam applications; MOST transistors; channel implantations; diffusive redistribution; electrical activation; laser annealing; threshold shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790129
