Title :
Wavelength dependence of transient laser-induced latchup in epi-CMOS test structures
Author :
LaLumondiere, Stephen D. ; Koga, Rocky ; Osborn, Jon V. ; Mayer, Donald C. ; Lacoe, Ronald C. ; Moss, Steven C.
Author_Institution :
Aerosp. Corp., Los Angeles, CA, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
We report the thresholds for laser-induced latchup on epitaxial CMOS test structures for 600 nm and 815 nm excitation. We analyze the differences observed in terms of different latchup triggering mechanisms and compare the results with measurements of energetic particle-induced latchup.
Keywords :
CMOS integrated circuits; laser beam effects; semiconductor epitaxial layers; 600 nm; 815 nm; epitaxial CMOS test structure; transient laser-induced latchup; wavelength dependence; CMOS process; Energy measurement; Epitaxial layers; Laser excitation; Laser theory; Pulse measurements; Pulsed laser deposition; Substrates; Surface emitting lasers; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805381
