Title :
9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm
Author :
Martinez, A. ; Provost, J.G. ; Dagens, B. ; Sallet, V. ; Jahan, D. ; Merghem, K. ; Ferlazzo, L. ; Landreau, J. ; Le Gouezigou, O. ; Harmand, J.C. ; Ramdane, A.
Author_Institution :
CNRS/Lab. de Photonique et de Nanostructures, Marcoussis, France
fDate :
4/1/2004 12:00:00 AM
Abstract :
High frequency characterisation of three-quantum well GaInNAs/GaAs lasers operating at 1.35 μm is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; 1.35 micron; 10 Gbit/s; 7.4 GHz; 9.7 GHz; GaAs; GaAs devices; GaInNAs-GaAs; GalnNAs/ GaAs lasers; dilute nitrides; direct modulation; relaxation frequency; small signal bandwidth; three quantum well lasers diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040305
