Probabilistic approach for hot electron transport

In this paper the authors present a probabilistic approach in which the material is described in terms of a sparse scattering rate matrix. This one needs to be calculated only once by a Monte Carlo technique. Fluctuations are absent from the results. All devices using the same material recur to this matrix in terms of scattering. Results are for GaAs at 300 K using a 3-valley model. They agree well with those obtained by standard Monte Carlo, both for bulk material and when the effects of the carrier distribution on the field are included. In this last case the authors have chosen the well known results of the n ⁺-i-n⁺ structure to compare with their own. For the n⁺-i-n⁺ structure results for low voltages, which are generally beyond the reach of pure Monte Carlo methods, are presented. Extension of the method to the transport of two-dimensional electron gases is straightforward