Title :
Nonlinear MOSFET model for the design of RF power amplifiers
Author :
Hoile, G.A. ; Reader, H.C.
Author_Institution :
Dept. of Electron. Eng., Natal Univ., Durban, South Africa
fDate :
10/1/1992 12:00:00 AM
Abstract :
A nonlinear equivalent circuit model for RF power MOSFET´s is given. The model extraction uses cold S-parameter measurements. Pulsed drain current measurements are taken with the junction at the RF operating temperature. A method of thermally characterising the MOSFET is described. An equation is developed to represent accurately the drain current characteristics. The methods given are easily applied to devices which operate at up to 400 MHz with power ratings in the 1 W to 100 W range. The accuracy of the modelling procedure is verified by large-signal RF and DC measurements
Keywords :
S-parameters; equivalent circuits; insulated gate field effect transistors; power amplifiers; radiofrequency amplifiers; semiconductor device models; 1 to 100 W; 400 MHz; MOSFET model; RF operating temperature; RF power amplifiers; cold S-parameter measurements; drain current characteristics; model extraction; nonlinear equivalent circuit model;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
