Title :
GaInNAs-based distributed feedback laser diodes emitting at 1.5 μm
Author :
Gollub, D. ; Moses, S. ; Fischer, M. ; Kamp, M. ; Forchel, A.
Author_Institution :
Univ. Wurzburg, Germany
fDate :
4/1/2004 12:00:00 AM
Abstract :
For the first time, GaAs-based 1.5 μm singlemode emission has been realised utilising GaInNAs active-layer material and lateral distributed feedback. The double quantum well separate confinement laser structure was grown by plasma-assisted molecular beam epitaxy. A threshold current of 240 mA and an external efficiency of 0.11 W/A could be demonstrated with a sidemode suppression ratio of better than 26 dB in pulsed operation. Singlemode emission up to 1506.5 nm has been realised.
Keywords :
III-V semiconductors; MOCVD coatings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; quantum well lasers; 1.5 micron; 240 mA; DFB laser; GaInNAs; GaInNAs based distributed feedback laser diodes; GalnNAs active layer material; double quantum well; plasma assisted molecular beam epitaxy; pulsed operation; singlemode emission; suppression ratio; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040279
