Title :
Single-event burnout of n-p-n bipolar-junction transistors in hybrid DC/DC converters
Author :
Warren, Kevin ; Roth, David ; Kinnison, Jim ; Pappalardo, Richard
Author_Institution :
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
Single-event-induced failure of the Lambda Advanced Analog AMF2805S DC/DC Converter has been traced to burnout of an n-p-n transistor in the MOSFET drive stage. The failures were observed during testing while in inhibit mode only. Modifications to prevent burnout of the drive stage were successfully employed. A discussion of the failure mechanism and consequences for DC/DC converter testing are presented.
Keywords :
DC-DC power convertors; failure analysis; ion beam effects; power bipolar transistors; Lambda Advanced Analog AMF2805S; MOSFET drive stage; failure mechanism; hybrid DC/DC converter; inhibit mode; ionizing radiation effect; n-p-n bipolar junction transistor; single-event burnout testing; Circuit testing; DC-DC power converters; Driver circuits; Failure analysis; Laboratories; MOSFET circuits; Physics; Pulse width modulation; Pulse width modulation converters; Transistors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805440
