DocumentCode
949978
Title
Single-event burnout of n-p-n bipolar-junction transistors in hybrid DC/DC converters
Author
Warren, Kevin ; Roth, David ; Kinnison, Jim ; Pappalardo, Richard
Author_Institution
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
Volume
49
Issue
6
fYear
2002
fDate
12/1/2002 12:00:00 AM
Firstpage
3097
Lastpage
3099
Abstract
Single-event-induced failure of the Lambda Advanced Analog AMF2805S DC/DC Converter has been traced to burnout of an n-p-n transistor in the MOSFET drive stage. The failures were observed during testing while in inhibit mode only. Modifications to prevent burnout of the drive stage were successfully employed. A discussion of the failure mechanism and consequences for DC/DC converter testing are presented.
Keywords
DC-DC power convertors; failure analysis; ion beam effects; power bipolar transistors; Lambda Advanced Analog AMF2805S; MOSFET drive stage; failure mechanism; hybrid DC/DC converter; inhibit mode; ionizing radiation effect; n-p-n bipolar junction transistor; single-event burnout testing; Circuit testing; DC-DC power converters; Driver circuits; Failure analysis; Laboratories; MOSFET circuits; Physics; Pulse width modulation; Pulse width modulation converters; Transistors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.805440
Filename
1134266
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