Title :
Comparison of heavy ion and proton-induced single event effects (SEE) sensitivities
Author :
Koga, R. ; Yu, P. ; Crawford, K. ; Crain, S. ; Tran, V.
Author_Institution :
Aerosp. Corp., Los Angeles, CA, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
Proton-induced single event effects of a set of microcircuits are compared with effects due to heavy ions. Even though some microcircuits show a relatively high sensitivity to heavy ions, they do not have a corresponding sensitivity to protons.
Keywords :
BiCMOS integrated circuits; CMOS memory circuits; SRAM chips; integrated circuit reliability; integrated circuit testing; ion beam effects; proton effects; transceivers; BiCMOS technology; CMOS technology; SDRAM; SEU prediction models; SRAM; heavy ion induced upsets; heavy ion sensitivity; microcircuits; proton sensitivity; proton-induced single event effects; transceivers; Aerospace testing; Equations; Helium; Predictive models; Protons; Radiation effects; SDRAM; Single event upset; Transceivers; Transmitters;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805426
