Title :
Waveguiding and temperature characteristics of threshold current and amplitude-phase coupling coefficient in double-heterostructure lasers
Author_Institution :
USSR Academy of Sciences, P.N. Lebedev Physical Institute, Moscow, USSR
fDate :
6/1/1988 12:00:00 AM
Abstract :
The problem of the electromagnetic wave propagation in a plane three-layer dielectric waveguide with complex values of the dielectric constant has been solved accurately. The solution of the problem, as applied to InGaAsP injection heterolasers makes it possible to explain the anomalously high temperature sensitivity of threshold current as the result of decreasing the waveguiding. It is evident that such imperfect features of the heterostructure, as the asymmetry or roughness of layers boundaries, worsen the temperature dependence of threshold current, and increase the coefficient of amplitude-phase coupling.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical waveguide theory; semiconductor junction lasers; III-V semiconductor; InGaAsP; InGaAsP injection heterolasers; amplitude-phase coupling coefficient; dielectric constant; double-heterostructure lasers; electromagnetic wave propagation; high temperature sensitivity; layers boundaries; plane three-layer dielectric waveguide; temperature characteristics; threshold current;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j.1988.0045