DocumentCode :
950090
Title :
Waveguiding and temperature characteristics of threshold current and amplitude-phase coupling coefficient in double-heterostructure lasers
Author :
Bogatov, A.P.
Author_Institution :
USSR Academy of Sciences, P.N. Lebedev Physical Institute, Moscow, USSR
Volume :
135
Issue :
3
fYear :
1988
fDate :
6/1/1988 12:00:00 AM
Firstpage :
226
Lastpage :
232
Abstract :
The problem of the electromagnetic wave propagation in a plane three-layer dielectric waveguide with complex values of the dielectric constant has been solved accurately. The solution of the problem, as applied to InGaAsP injection heterolasers makes it possible to explain the anomalously high temperature sensitivity of threshold current as the result of decreasing the waveguiding. It is evident that such imperfect features of the heterostructure, as the asymmetry or roughness of layers boundaries, worsen the temperature dependence of threshold current, and increase the coefficient of amplitude-phase coupling.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical waveguide theory; semiconductor junction lasers; III-V semiconductor; InGaAsP; InGaAsP injection heterolasers; amplitude-phase coupling coefficient; dielectric constant; double-heterostructure lasers; electromagnetic wave propagation; high temperature sensitivity; layers boundaries; plane three-layer dielectric waveguide; temperature characteristics; threshold current;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
DOI :
10.1049/ip-j.1988.0045
Filename :
4648725
Link To Document :
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