• DocumentCode
    950159
  • Title

    FDTD modelling of velocity mismatch in travelling-wave heterojunction phototransistor

  • Author

    Tsakmakidis, K.L. ; Gomez-Rojas, L. ; Robertson, I.D. ; Hess, O. ; Houston, P.A. ; Weiss, B.

  • Author_Institution
    Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
  • Volume
    40
  • Issue
    7
  • fYear
    2004
  • fDate
    4/1/2004 12:00:00 AM
  • Firstpage
    452
  • Lastpage
    454
  • Abstract
    Three-dimensional finite-difference time-domain modelling of a travelling-wave heterojunction phototransistor is presented. The electromagnetic model allows the simultaneous simulation of the optical and microwave properties of the travelling-wave structure. The results clearly demonstrate the effect of velocity mismatch between the optical wave and the photogenerated electrical wave.
  • Keywords
    III-V semiconductors; aluminium compounds; finite difference time-domain analysis; gallium arsenide; heterojunction bipolar transistors; indium compounds; phototransistors; semiconductor device models; FDTD; InAlGaAs; electromagnetic model; finite-difference time-domain modelling; microwave properties; optical properties; travelling wave heterojunction phototransistor; velocity mismatch;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040248
  • Filename
    1283622