DocumentCode
950165
Title
Erratum: Rectification at n-n GaAs:(Ga,Al)As heterojunctions
Author
Chandra, Aniruddha ; Eastman, L.F.
Volume
15
Issue
7
fYear
1979
Firstpage
216
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junctions; GaAlAs-GaAs heterojunctions; IV characteristics; accumulation region; depletion region; n-n heterojunctions; rectification;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790152
Filename
4243110
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